功率MOSFET的Coss会产生开关损耗，在正常的硬开关过程中，关断时VDS的电压上升，电流ID对Coss充电，储存能量。在MOSFET开通的过程中，由于VDS具有一定的电压，那么Coss中储能
2017-03-28 11:17
Benefits Applications : Low Gate to Drain Charge to Reduce Switching Losses : Fully Characterized Capacitance Including Effective COSS to Simplify Design
2017-09-20 15:16
to Reduce Switching Losses : Fully Characterized Capacitance Including Effective COSS to Simplify Design
2017-09-20 15:07
to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design
2017-09-20 14:44
to Reduce Switching Losses : Fully Characterized Capacitance Including Effective COSS to Simplify Design
2017-09-20 15:07
IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltageand Curre
2008-10-24 10:32
当MOSFET关断时，由于主变压器的漏感器（Llk）和MOSFET的输出电容器（COSS）之间发生共振，漏极引脚上出现高压尖峰。漏极引脚上的过大电压可能导致雪崩击穿，并最终损坏MOSFET。因此，有必要增加一个附加电路来钳制电压。本文提出了反激变换器RCD缓冲电路的设计原则。
2020-06-09 08:00
）为100nA，其工作时耐温度范围为-40~175摄氏度。AIGW40N65H5的输入电容（Ciss）为2300pF，输出电容（Coss）为43pF。AIGW40N65H5的电性参数是：脉冲集电极电流（I
2023-02-24 09:40
100nA，其 工作时耐温度范围为-40~175摄氏度。AIGW50N65H5的输入电容（Ciss）为2800pF，输出电容（Coss）为54pF。AIGW50N65H5的电性参数是：脉冲集电极电流（ICpuls）为 150A，集电极到发射极电压（VCES）为650V，打开延迟时间td(on)为21ns，
2023-02-24 09:38
