2023-02-06 11:46
我试图擦除 stm32g474re nucleo 上的一些闪存页面（以及带有 stm32g474veh3 的定制板上）。闪存页面都在闪存库 2 上，因为我在参考手册中读到闪存库 2 可以在代码从银行
2023-01-12 07:04
){if (huart->Instance == USART2){ __NOP();}}/* USER CODE END 1 */STM32F745VEH6 链接器
2022-12-13 06:27
我担心假设任何没有严格规范的东西，V_EH引脚似乎没有关于它的信息。1）数据表显示'当能量收集模式被禁用或RF场强不足时，能量收集模拟电压输出V_EH处于高阻态。与此High-Z状态相关的规范是什么？具体是什么是反向泄漏？2）我看不出任何与V_EH输出电压与电流特性相关的规范。它们存在吗？我认为它将是RF领域的一个功能。引脚上的空载电压是多少？这是这项工作的最佳IC吗？任何帮助将不胜感激。以上来自于谷歌翻译以下为原文 I'm wary about assuming anything that doesn't have a firm specification and the V_EH pin seems to have very little information about it.1) The datasheet says 'When the Energy harvesting mode is disabled or the RF field strength is not sufficient, the energy harvesting analog voltage output V_EH is in High-Z state.' What is the specification associated with this High-Z state? Specifically what is the reverse leakage?2) I cannot see any specification associated with V_EH output voltage vs current characterisitcs. Do they exist? I apreciate it will be a function of the RF field. What is the unloaded voltage on the pin?Is this the best IC for the job?Any assistance would be greatly appreciated.
2019-07-29 14:16
1.3.200.v20120525-1249-7B79FJJAkF7BF7VEH5IAJT. Installing org.eclipse.cdt.feature.group 8.1.1.201209170703. Installing
2018-06-21 18:08
