nA Low Iq Operation during Shutoff-17 V to 40 V Wide Maximum DC Voltage Range30 mA Gate Drive (Typ) for High Power MOSFETs
2018-10-31 11:27
Overtemperature Shutoff Battery Status Output–Battery Good Output Pin–Programmable Threshold
2015-04-23 14:18
with Programmable Overtemperature Shutoff• Battery Status Output–Battery Good Output Pin–Programmable
2015-04-23 14:57
。EFM32系列MCU在活动模式下执行来自Flash的实际代码时耗电量为150μA，在深度睡眠模式下为900nA，在shutoff模式下为20nA。芯片的休眠模式唤醒时间低于2μs，供电电压范围可达1.8
2014-08-25 16:12
