rt，谁能给一份IRL1540G的资料。
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This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature
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IRL3713S - SMPS MOSFET - International Rectifier
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IRL620 - Power MOSFET - Vishay Siliconix
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IRL510PBF-BE3
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Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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IRL3202 - HEXFET Power MOSFET - International Rectifier
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