CRTD063N04L
2023-03-29 22:42
CRTD030N03L
2023-03-29 21:39
类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):20A;功率(Pd):40W;导通电阻(RDS(on)@Vgs,Id):11mΩ@10V,12A;阈值电压(Vgs(th)@Id):1.8V@250uA;
2024-04-02 10:46
类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):80A;功率(Pd):101W;导通电阻(RDS(on)@Vgs,Id):4.5mΩ@10V,30A;阈值电压(Vgs(th)@Id):2.3V@250uA;
2024-04-02 10:46
沟槽N-MOSFET 30V，4.3米Ω, 58A至252
2023-03-28 12:51
