This MOSFET has been designed to minimizethe on-state resistance (RDS(on)) and yet maintainsuperior switching performance, making it idealfor high efficiency p
The JXP3416EVRG uses advanced trenchtechnology to provide excellent RDS(ON), low gatecharge and high density cell Design for ultra lowon-resistance. This device is sui
The JXP3401VRG uses advanced trenchtechnology to provide excellent RDS(ON), low gatecharge and high density cell Design for ultra lowon-resistance. This device is suit
The JXP2300VRG uses advanced trenchtechnology to provide excellent RDS(ON), low gatecharge and high density cell Design for ultra lowon-resistance. This device is suit
The JXP3407MRG uses advanced trenchtechnology to provide excellent RDS(ON), low gatecharge and high density cell Design for ultra lowon-resistance. This device is suit