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2022-11-04 17:22
beam epitaxy (MBE) which has excellent control featuresand our development of an SAM laser with an ideal laserstructure, we have succeeded in the hitherto unthinkablemass production of our RLD series of laser diodes.An example which compares the dispersion of q^ and q/ /characteristics of our RLD-78MA with a previous productis shown in Fig. 9. Dispersion has been reduced to lessthan one-third that of the previous product, and this tightdispersion range means that we can consistently supplylarge quantities of laser diodes which are optimum for thetarget application.
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2022-11-04 17:22
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CMOSH-4E_10 - ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE - Central Semiconductor Corp
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