CY7C1021是一个高性能的CMOS静态RAM，由16位65536字组成。此设备具有自动断电功能，取消选择时可显著降低功耗。对设备的写入是通过使能芯片（CE）和使能写入（WE）低输入来完成的。如果
2019-12-12 08:00
as 262，144 words by 16 bits. They are fabricated using ISSI‘s highperformance CMOS technology.
2017-09-20 10:10
organized as 131，072 words by 16 bits. It is fabricated using ISSI‘s highperformance CMOS technology.
2017-09-20 10:21
The ISSI IS61C6416AL， IS62C6416AL， IS64C6416AL and IS65C6416AL are high-speed， 1，048，576-bit static RAMs organized as 65，536 words by 16 bits.
2017-09-20 10:16
CMOS static RAM. The IS61WV20488ALL/BLL and IS64WV20488BLL are fabricated using ISSI‘s high-performance CMOS
2017-09-20 11:03
TheISSIIS62C256AL/IS65C256AL isalowpower，32，768 word by 8-bit CMOS static RAM. It is fabricated
2017-09-20 10:46
CMOS static RAM. The IS61WV10248ALL/BLL and IS64WV10248BLL are fabricated using ISSI‘s high-performance CMOS
2017-09-20 10:58
The ISSI IS61C6416AL， IS62C6416AL， IS64C6416AL and IS65C6416AL are high-speed， 1，048，576-bit static RAMs organized as 65，536 words by 16 bits.
2017-09-20 11:34
The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx are high-speed， 4，194，304-bit static RAMs organized as 262，144 words by 16 bits. It is fabricated using ISSI‘s highperformanceCMOStechnology.
2017-09-20 10:01
TheISSIIS61/64WV3216BLLisahigh-speed，524，288-bit static RAM organized as 32，768 words by 16 bits. It is fabricated using ISSI‘s high-performance
2017-09-20 11:44
