对CMOS SRAM抗单粒子翻转性能的影响及原因。研究表明:随着特征尺寸的减小,SRAM单元单粒子翻转的临界电荷减小,电荷收集效率由于寄生双极晶体管效应而增加,造成LETth随特征尺寸缩小而迅速减小,
2010-04-22 11:50
HM3-65728BK-5 CMOS SRAM 产品介绍HM3-65728BK-5询价热线HM3-65728BK-5现货HM3-65728BK-5代理 王先生*** 深圳市首质诚科技有限公司
2018-12-05 15:44
The AS7C4096A is a high-performance CMOS 4，194，304-bit Static Random Access Memory （SRAM） device
2017-09-20 09:29
The AS7C3256A is a 3.3V high-performance CMOS 262，144-bit Static Random-Access Memory （SRAM） device
2017-09-20 09:32
The AS7C31026B is a high-performance CMOS 1，048，576-bit Static Random Access Memory （SRAM） device
2017-09-20 09:38
The AS7C34098A is a high-performance CMOS 4，194，304-bit Static Random Access Memory （SRAM） device organized as 262，144 words × 16 bi
2017-09-19 16:59
The AS6C1008 is a 1，048，57 6-bit low power CMOS static random access memory organized as 131，072
2017-09-19 16:52
The AS6C62256A is a static RAM manufactured using a CMOS process technology with the following
2017-09-19 17:36
The AS6C1008 is a 1，048，57 6-bit low power CMOS static random access memory organized as 131，072
2017-09-19 16:52
The AS6C4008 is a 4，194，304-bit low power CMOS static random access memory organized as 524，288
2017-09-19 16:56
