FEATURES Power dissipationPCM : 0.625 W（Tamb=25℃）Collector currentICM : 0.5 ACollector-base voltageV(BR)CBO : 40 V
2008-09-06 12:12
9014三极管资料:FEATURESPower dissipationPCM : 0.4 W Tamb=25Collector currentICM : 0.1 ACollector-base voltageV(BR)CBO : 50 V
2010-03-30 12:37
(BR)CBO : -40 VOperating and storage junction temperature rangeTJ，Tstg: -55℃ to +150℃
2009-11-07 11:28
9014 NPN SILICON TRANSISTOR FEATURES Power dissipation PCM : 0.4 W Tamb=25 Collector currentICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V
2008-08-29 12:39
Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO Ic= 100μA ，IE=0 600 VCollector-e
2010-03-30 13:06
: 1.5 ACollector-base voltageV(BR)CBO : 40 VOperating and storage junction temperature rangeTJ，Tstg:
2008-09-06 12:21
designed for computer and switching applications. Specifications Military/High-Rel:NV(BR)CBO (V):25I(C) Max. (A):300mAbsolute Max. P
2008-07-08 12:34
FEATURES特 征 三极管9013中文资料Power dissipation 最大耗散功率PCM : 0.625 W Tamb=25Collector current 最大集电极电流ICM : 0.5 ACollector-base voltage 集电极--基极击穿电压V(BR)CBO :
2008-06-10 09:51
介绍了一种数话同传控制器的实现方法" 该控制器以单片机6L*I?&A 和9CBO 芯片9C7+)A* 为核心! 采用>7?@ 调制解调器和6789 话音4:;<= 以及新的数话同传方案!在一个普通的模拟
2010-07-01 18:01
Parameter Value Unit V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO
2017-12-07 15:48
