{"error":{"root_cause":[{"type":"query_shard_exception","reason":"failed to create query: {\n \"regexp\" : {\n \"keyword\" : {\n \"value\" : \".*X28HC64 pdf datasheet (5 Volt,.*\",\n \"flags_value\" : 65535,\n \"max_determinized_states\" : 10000,\n \"boost\" : 1.0\n }\n }\n}","index_uuid":"SON-ziQURzKK3JljPlVlCQ","index":"recommend_keyword_search_v1"}],"type":"search_phase_execution_exception","reason":"all shards failed","phase":"query","grouped":true,"failed_shards":[{"shard":0,"index":"recommend_keyword_search_v1","node":"c8Ry91qkQA6igO07LZRl5w","reason":{"type":"query_shard_exception","reason":"failed to create query: {\n \"regexp\" : {\n \"keyword\" : {\n \"value\" : \".*X28HC64 pdf datasheet (5 Volt,.*\",\n \"flags_value\" : 65535,\n \"max_determinized_states\" : 10000,\n \"boost\" : 1.0\n }\n }\n}","index_uuid":"SON-ziQURzKK3JljPlVlCQ","index":"recommend_keyword_search_v1","caused_by":{"type":"illegal_argument_exception","reason":"expected ')' at position 34"}}}]},"status":400}
gateCMOS technology. Like all Intersil programmable nonvolatilememories, the X28HC64 is a 5V only device. Itfeatures the J
2009-01-10 09:55
X28HC64 数据表
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X28HC64 - 5 Volt, Byte Alterable EEPROM - Intersil Corporation
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with Intersil’sproprietary, textured poly floating gate technology, providinga highly reliable 5V only nonvolatile memory.The X28HC
2009-01-10 10:02
The Microchip Technology Inc. 28C64A is a CMOS 64K nonvolatileelectrically Erasable PROM.
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The X28C512, X28C513 are 64K x 8 EEPROM, fabricatedwith Intersil’s proprietary, high
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The Microchip Technology Inc. 28LV64A is a CMOS 64K non-volatileelectrically Erasable PROM
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The Microchip Technology Inc. 27LV64 is a low-voltage(3.0 volt) CMOS EPROM designed for battery
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AP28G45GEM datasheet,pdf资料 N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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FM28V100 datasheet pdf ,1Mbit Bytewide F-RAM Memory The FM28V100 is a 128K
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