Introduction The processing that is required to lower the dielectric constant in a low-k fi
2010-08-17 12:21
本文介绍了影响集成电路可靠性的Cu/low-k互连结构中的电迁移问题。
2025-03-13 14:50
Low-K材料是介电常数显著低于传统二氧化硅（SiO₂，k=3.9–4.2）的绝缘材料，主要用于芯片制造中的层间电介质（ILD）。其核心目标是通过降低金属互连线间的寄生电容，解决RC延迟（电阻-电容延迟）和信号串扰问题，从而提升芯片性能和集成度。
2025-03-27 10:12
检测方案已成功应用于 low-k 电介质沉积应用 ( 特别是氮化硅 Si3N4 ), 在减少颗粒污染的同时, 缩短了生产时间.
2023-06-21 10:03
Introduction Historically, the mechanical performances of multilayered thin-fi lm metal stacks have been diffi cult to characterize for failure by any means. Recent developments in nanoscratch techniques
2010-08-18 15:43
Introduction A common failure of a hard drive occurs when a computer is moved or dropped and the read heads come into contact with the hard disk platters. If permanent deformation is caused from this contact you may
2010-08-17 10:47
指介电常数较低的材料。这种材料广泛运用于集成电路中，可以减少漏电电流、降低导线之间的电容效应，并减少集成电路的发热问题 ，在高频基板和高速电路设计中尤为重要，能够减少信号延迟，提高电路的响应速度。
2025-05-27 09:48
Smart FET Robustness Testing Agenda• Repetitive Clamp Testing• Repetitive Short Circuit Testing
2010-04-16 10:53
Testing AT
2010-07-10 11:32
Dynamic Testing Method for Yarn Tension Ahshmct Various dynamic test devices of tam tension
2009-01-21 11:58
