{"error":{"root_cause":[{"type":"query_shard_exception","reason":"failed to create query: {\n \"regexp\" : {\n \"keyword\" : {\n \"value\" : \".*3 V高级引导闪速存储器28F160B3技术资料更新(199.*\",\n \"flags_value\" : 65535,\n \"max_determinized_states\" : 10000,\n \"boost\" : 1.0\n }\n }\n}","index_uuid":"SON-ziQURzKK3JljPlVlCQ","index":"recommend_keyword_search_v1"}],"type":"search_phase_execution_exception","reason":"all shards failed","phase":"query","grouped":true,"failed_shards":[{"shard":0,"index":"recommend_keyword_search_v1","node":"-Gn7X2aRSFmN2hMyaNEUCA","reason":{"type":"query_shard_exception","reason":"failed to create query: {\n \"regexp\" : {\n \"keyword\" : {\n \"value\" : \".*3 V高级引导闪速存储器28F160B3技术资料更新(199.*\",\n \"flags_value\" : 65535,\n \"max_determinized_states\" : 10000,\n \"boost\" : 1.0\n }\n }\n}","index_uuid":"SON-ziQURzKK3JljPlVlCQ","index":"recommend_keyword_search_v1","caused_by":{"type":"illegal_argument_exception","reason":"expected ')' at position 34"}}}]},"status":400}
The 28F160B3 may contain design defects or errors known as errata which may cause theproduct
2009-05-19 14:11
存储器接口的电路呢?答案是肯定的。我们用普通的8位单片机AT89C52设计了一个与闪速存储器TE28F160B3的接口电
2019-05-28 05:00
存储器则通过引入创新的擦除编程电路技术和高速灵敏度放大器,实现了对所有存储单元的同时、快速擦除。这种高效的擦除速度,使得闪速
2025-01-29 15:14
The 28F160S3, 28F320S3, 28F160S5 and 28F320S5 may contain design defects or errors k
2009-05-19 14:08
1.0 INTRODUCTION .............................................52.0 3 VOLT ADVANCED+ BOOT
2009-05-22 14:42
如图 2 所示,DINOR闪速存储器如图 3 所示,AND闪速
2018-04-09 09:29
The 28F200B5, 28F004B5/400B5 and 28F800B5 may contain design defects or errors known
2009-05-19 14:22
(Smart VoltageRegulator);另一种方法是通过给控制栅加上负电压(-10V左右),挤出浮置栅中的电荷(负极门擦除法)。各种电压提供方式如图 3 所示。图 4 图示了闪
2018-04-10 10:52
第一代闪速存储器28
2009-05-22 15:09
M29F102B 和M29F105B闪速存储器相关技术信息和软件源代码.
2009-05-19 16:22